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dc.contributor.authorBenfdila, Arezki
dc.contributor.authorLakhlef, Ahcene
dc.date.accessioned2020-06-28T10:07:37Z
dc.date.available2020-06-28T10:07:37Z
dc.date.issued2019
dc.identifier.urihttps://dl.ummto.dz/handle/ummto/11399
dc.description.abstractGraphene transistors are considered to be the successor’s basic element for the next generation of advanced integrated circuits. The graphene suffers from the absence of energy band gap to experience a semiconductor like characteristics. In order to instigate a bandgap, several techniques are used to beak symmetry. The most useful graphene sheet is the Graphene Nanoribbon (GNR). The present paper deals with the investigation on the bandgap engineering approach aiming an increase of the switching characteristics of the graphene transistors. The GNR sheets are synthesized using different techniques yielding controlled electronics and physical characteristicsen
dc.language.isoenen
dc.titleInvestigation on High Switching Performances Graphene Transistors Using Band-gap Engineeringen
dc.typeWorking Paperen


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